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2N7002LT1G - ON Semiconductor

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Kynix Teil #: KY13-2N7002LT1G

Hersteller Teil #: 2N7002LT1G

Produktkategorie: Transistors - FETs, MOSFETs - Single

Hersteller: ON Semiconductor

Beschreibung: MOSFET N-CH 60V 0.115A SOT-23

Verpackung: TO-236-3, SC-59, SOT-23-3

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

2N7002LT1G Datenblatt

Attribute

Attribute Value

Factory Lead Time

10 Weeks

Contact Plating

Tin

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Number of Pins

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

115mA Tc

Drive Voltage (Max Rds On, Min Rds On)

5V 10V

Number of Elements

Power Dissipation (Max)

225mW Ta

Turn Off Delay Time

40 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250μA

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

Published

2007

JESD-609 Code

Pbfree Code

yes

Part Status

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

7.5Ohm

Voltage - Rated DC

60V

Terminal Position

DUAL

Terminal Form

GULL WING

Current Rating

115mA

Number of Channels

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

225mW

Turn On Delay Time

20 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

7.5 Ω @ 500mA, 10V

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

Vgs (Max)

±20V

Continuous Drain Current (ID)

115mA

Threshold Voltage

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

60V

Max Junction Temperature (Tj)

150°C

Nominal Vgs

2.5 V

Feedback Cap-Max (Crss)

5 pF

Height

1.11mm

Length

3.04mm

Width

1.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
2N7002LT1G	TO-236-3, SC-59, SOT-23-3	MOSFET N-CH 60V 0.115A SOT-23
2N7002LT3G	TO-236-3, SC-59, SOT-23-3	MOSFET N-CH 60V 0.115A SOT-23
2N7002E-7-F	TO-236-3, SC-59, SOT-23-3	MOSFET N-Channel
2N7002L	TO-236-3, SC-59, SOT-23-3	MOSFET N-CH 60V 0.115A SOT-23
2V7002LT3G	TO-236-3, SC-59, SOT-23-3	MOSFET NFET 60V 115MA 7.5O

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Suchen Sie nach anderen Teilen wie 2n700

What is small signal and large signal in amplifiers?

Input/output impedances used for distinguishing between a small signal and a large signal amplifier. Amplifier has high input impedance and low output impedance. Small signal deals with very low amplitude signals and it is apply-input side of amplifier. Large signal deals with very high amplitude signal.

Why FET is smaller than BJT?

Field-effect transistors provide high input impedance as compared with BJTs. The gain of FETs is lesser as compared with BJTs. The radiation effect of FET is less. The offset voltage of FET is zero at zero drain current & therefore it makes an outstanding signal chopper.

What is small signal current gain?

Small signal current gain is the ratio of a change in IC to a change in IB, with the initial IC value specified. On the curve tracer, hfe is checked by measuring the difference in IC between two values of IB. The Collector Supply drives the collector and the Step Generator drives the base.