Factory Lead Time  

12 Weeks

Package / Case  

TO-261-4, TO-261AA

Mount  

Surface Mount

Mounting Type  

Surface Mount

Number of Pins  

4

Weight  

4.535924g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

3.3W Tc

Current - Continuous Drain (Id) @ 25℃  

2.4A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Turn Off Delay Time  

20 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~150°C TJ

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Resistance  

260mOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Voltage - Rated DC  

100V

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

2A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

STN2N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.3W

Turn On Delay Time  

6 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

260m Ω @ 1.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

280pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

14nC @ 10V

Rise Time  

10ns

Vgs (Max)  

±20V

Fall Time (Typ)  

3 ns

Continuous Drain Current (ID)  

2A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

2A

Drain to Source Breakdown Voltage  

100V

Pulsed Drain Current-Max (IDM)  

8A

Avalanche Energy Rating (Eas)  

300 mJ

Height  

1.8mm

Length  

6.5mm

Width  

3.5mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free