Factory Lead Time  

6 Weeks

Contact Plating  

Tin

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

6-SMD, Flat Leads

Number of Pins  

6

Transistor Element Material  

SILICON

Turn Off Delay Time  

4.1 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1.55V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

3V 8V

Number of Elements  

1

Power Dissipation (Max)  

2.3W Ta

Series  

NexFET™

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

JESD-609 Code  

e4

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

6

ECCN Code  

EAR99

Terminal Finish  

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Position  

DUAL

Peak Reflow Temperature (Cel)  

260

Base Part Number  

CSD16301

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.3W

Case Connection  

DRAIN

Turn On Delay Time  

2.7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

24m Ω @ 4A, 8V

Input Capacitance (Ciss) (Max) @ Vds  

340pF @ 12.5V

Gate Charge (Qg) (Max) @ Vgs  

2.8nC @ 4.5V

Rise Time  

4.4ns

Vgs (Max)  

+10V, -8V

Fall Time (Typ)  

1.7 ns

Continuous Drain Current (ID)  

5A

Threshold Voltage  

1.2V

Gate to Source Voltage (Vgs)  

10V

Drain Current-Max (Abs) (ID)  

5A

Drain-source On Resistance-Max  

0.034Ohm

Drain to Source Breakdown Voltage  

25V

Pulsed Drain Current-Max (IDM)  

20A

Max Junction Temperature (Tj)  

150°C

Nominal Vgs  

1.2 V

Width  

2mm

Height  

800μm

Length  

2mm

Thickness  

750μm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free