Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

200W Tc

Turn Off Delay Time  

76 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Current - Continuous Drain (Id) @ 25℃  

9.2A Tc

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

HIGH VOLTAGE

Base Part Number  

STW11N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

200W

Turn On Delay Time  

30 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

980m Ω @ 4.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

115nC @ 10V

Rise Time  

19ns

Vgs (Max)  

±30V

Fall Time (Typ)  

50 ns

Continuous Drain Current (ID)  

9.2A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.98Ohm

Drain to Source Breakdown Voltage  

900V

Avalanche Energy Rating (Eas)  

400 mJ

Height  

20.15mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free