Factory Lead Time  

17 Weeks

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Surface Mount  

NO

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

130W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ K5

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP8N

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2 Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

505pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

13.7nC @ 10V

Drain to Source Voltage (Vdss)  

1200V

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

6A

Drain-source On Resistance-Max  

2Ohm

Pulsed Drain Current-Max (IDM)  

12A

DS Breakdown Voltage-Min  

1200V

Avalanche Energy Rating (Eas)  

415 mJ

RoHS Status  

ROHS3 Compliant