Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Weight  

9.071847g

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

8.3A Tc

Number of Elements  

1

Power Dissipation (Max)  

230W Tc

Turn Off Delay Time  

98 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.38Ohm

Terminal Finish  

Tin (Sn)

Additional Feature  

AVALANCHE RATED, HIGH VOLTAGE

Voltage - Rated DC  

1kV

Current Rating  

8.3A

Base Part Number  

STW11N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Turn On Delay Time  

27 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.38 Ω @ 4.15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

162nC @ 10V

Rise Time  

18ns

Drain to Source Voltage (Vdss)  

1000V

Vgs (Max)  

±30V

Fall Time (Typ)  

55 ns

Continuous Drain Current (ID)  

8.3A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-247AC

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

9A

Drain to Source Breakdown Voltage  

1kV

Avalanche Energy Rating (Eas)  

550 mJ

Max Junction Temperature (Tj)  

150°C

Height  

24.45mm

Length  

15.75mm

Width  

5.15mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free