00852-6915 1330 | [email protected]

FDS8928A - ON Semiconductor

Die Bilder dienen nur als Referenz Siehe Produktspezifikationen

Kynix Teil #: KY13-FDS8928A

Hersteller Teil #: FDS8928A

Produktkategorie: Transistors - FETs, MOSFETs - Arrays

Hersteller: ON Semiconductor

Beschreibung: Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC N T/R

Verpackung: 8-SOIC (0.154, 3.90mm Width)

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

FDS8928A Datenblatt

Attribute

Attribute Value

Lifecycle Status

ACTIVE (Last Updated: 6 days ago)

Factory Lead Time

8 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154, 3.90mm Width)

Number of Pins

Weight

230.4mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

5.5A 4A

Number of Elements

Turn Off Delay Time

260 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

30MOhm

Max Power Dissipation

Terminal Position

DUAL

Terminal Form

GULL WING

Current Rating

5.5A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

Power - Max

900mW

FET Type

N and P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

30m Ω @ 5.5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

28nC @ 4.5V

Rise Time

23ns

Drain to Source Voltage (Vdss)

30V 20V

Polarity/Channel Type

N-CHANNEL AND P-CHANNEL

Fall Time (Typ)

90 ns

Continuous Drain Current (ID)

5.5A

Threshold Voltage

670mV

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

-20V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Nominal Vgs

670 mV

Height

1.5mm

Length

5mm

Width

4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
FDS8928A	8-SOIC (0.154, 3.90mm Width)	Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8-Pin SOIC N T/R
IRF7307TRPBF	8-SOIC (0.154, 3.90mm Width)	MOSFET N/P-CH 20V 8-SOIC
FDS8433A	8-SOIC (0.154, 3.90mm Width)	Trans MOSFET P-CH 20V 5A 8-Pin SOIC N T/R
IRF7301TRPBF	8-SOIC (0.154, 3.90mm Width)	MOSFET 2N-CH 20V 5.2A 8-SOIC

FDS8928A Preis
FDS8928A Verteilers
FDS8928A Hersteller
FDS8928A Technische Daten
FDS8928A PDF
FDS8928A Datenblätter
FDS8928A Bild
FDS8928A Foto
FDS8928A Teil
FDS8928A Lagerbestand
FDS8928A Inventar
FDS8928A Angebotsanfrage
Kaufen FDS8928A
FDS8928A Anfrage
FDS8928A Onlinebestellung

Suchen Sie nach anderen Teilen wie fds89

What is meant by field effect transistor?

A field-effect transistor (FET) is a type of transistor commonly used for weak-signal amplification (for example, for amplifying wireless signals). The device can amplify analog or digital signals. It can also switch DC or function as an oscillator.

What are the characteristics of field effect transistor?

A Field Effect Transistor (FET) is a three-terminal semiconductor device. Its operation is based on a controlled input voltage. By appearance JFET and bipolar transistors are very similar. However, BJT is a current controlled device and JFET is controlled by input voltage.

What are the three types of FET?

FETs are subdivided into three different types: insulated gate FETs (better known as MOSFETs), junction FETs (JFETs), and metal-semiconductor FET (MESFET).