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FDY1002PZ - ON Semiconductor

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Kynix Teil #: KY13-FDY1002PZ

Hersteller Teil #: FDY1002PZ

Produktkategorie: Transistors - FETs, MOSFETs - Arrays

Hersteller: ON Semiconductor

Beschreibung: MOSFET 2P-CH 20V 0.83A SC89-6

Verpackung: SOT-563, SOT-666

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

FDY1002PZ Datenblatt

Attribute

Attribute Value

Lifecycle Status

ACTIVE (Last Updated: 20 hours ago)

Factory Lead Time

10 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Number of Pins

Weight

32mg

Number of Elements

Turn Off Delay Time

23 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerTrench®

Published

2006

JESD-609 Code

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

500mOhm

Max Power Dissipation

446mW

Terminal Form

FLAT

Element Configuration

Dual

Power Dissipation

625mW

Turn On Delay Time

3.5 ns

FET Type

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs

500m Ω @ 830mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 4.5V

Rise Time

2.9ns

Drain to Source Voltage (Vdss)

20V

Fall Time (Typ)

2.9 ns

Continuous Drain Current (ID)

830mA

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

0.83A

Drain to Source Breakdown Voltage

20V

FET Technology

METAL-OXIDE SEMICONDUCTOR

FET Feature

Logic Level Gate

Height

600μm

Length

1.7mm

Width

1.2mm

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
FDY1002PZ	SOT-563, SOT-666	MOSFET 2P-CH 20V 0.83A SC89-6
FDY102PZ	SC-89, SOT-490	MOSFET P-CH 20V 0.83A SC89-3
NTJS4405NT1	6-TSSOP, SC-88, SOT-363	MOSFET N-CH 25V 1A SOT-363
NTJS4405NT4G	6-TSSOP, SC-88, SOT-363	MOSFET N-CH 25V 1A SOT-363

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What is the basic principle of MOSFET?

When voltage is applied to the gate, an electrical field is generated that changes the width of the channel region, where the electrons flow. The wider the channel region, the better conductivity of a device will be.

What are the advantages of MOSFET?

The main advantage of MOSFET is that there is no gate current i.e. it does not have any input current. It has a very high input impedance due to the insulation layer. It consumes negligible energy in its operation due to a very low leakage current. It has a very high switching speed.

How does a MOSFET turn on?

In order to turn on a MOSFET, a voltage higher than the rated gate threshold voltage Vth must be applied to the gate. While in a steady on or off state, the MOSFET gate drive basically consumes no power. The gate-source capacitance of a MOSFET seen by the driver output varies with its internal state.