Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Number of Pins  

3

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

80V

Collector-Emitter Saturation Voltage  

1.1V

Power Dissipation (Max)  

625mW

Number of Elements  

1

hFEMin  

8000

Operating Temperature  

-55°C~150°C TJ

Packaging  

Bulk

Published  

2006

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

HTS Code  

8541.21.00.75

Voltage - Rated DC  

80V

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

240

Reach Compliance Code  

not_compliant

Current Rating  

1A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

BC373

Qualification Status  

Not Qualified

Polarity  

NPN

Element Configuration  

Single

Power Dissipation  

625mW

Transistor Application  

AMPLIFIER

Transistor Type  

NPN - Darlington

Collector Emitter Voltage (VCEO)  

80V

Max Collector Current  

1A

DC Current Gain (hFE) (Min) @ Ic, Vce  

10000 @ 100mA 5V

Current - Collector Cutoff (Max)  

100nA ICBO

Vce Saturation (Max) @ Ib, Ic  

1.1V @ 250μA, 250mA

Transition Frequency  

200MHz

Frequency - Transition  

200MHz

Collector Base Voltage (VCBO)  

80V

Emitter Base Voltage (VEBO)  

12V

Continuous Collector Current  

1A

Height  

5.33mm

Length  

5.2mm

Width  

533μm

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead