Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

20V

Collector-Emitter Saturation Voltage  

500mV

Number of Elements  

1

hFEMin  

50

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Box (TB)

Published  

2005

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Additional Feature  

EUROPEAN PART NUMBER

HTS Code  

8541.21.00.95

Voltage - Rated DC  

-20V

Max Power Dissipation  

625mW

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

240

Reach Compliance Code  

not_compliant

Current Rating  

-1A

Time@Peak Reflow Temperature-Max (s)  

30

Base Part Number  

BC369

Pin Count  

3

JESD-30 Code  

O-PBCY-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Power - Max  

625mW

Transistor Application  

AMPLIFIER

Gain Bandwidth Product  

56MHz

Polarity/Channel Type  

PNP

Transistor Type  

PNP

Collector Emitter Voltage (VCEO)  

500mV

Max Collector Current  

1A

DC Current Gain (hFE) (Min) @ Ic, Vce  

85 @ 500mA 1V

Current - Collector Cutoff (Max)  

10μA ICBO

Vce Saturation (Max) @ Ib, Ic  

500mV @ 100mA, 1A

Transition Frequency  

65MHz

Frequency - Transition  

65MHz

Emitter Base Voltage (VEBO)  

5V

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead