Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 Long Body

Number of Pins  

3

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

60V

Collector-Emitter Saturation Voltage  

400mV

Frequency - Gain Bandwidth Product (GBP)  

50MHz

Power Dissipation (Max)  

1W

Number of Elements  

1

hFEMin  

80

Operating Temperature  

-55°C~150°C TJ

Packaging  

Bulk

Published  

2009

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

HTS Code  

8541.29.00.75

Voltage - Rated DC  

60V

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

240

Reach Compliance Code  

not_compliant

Current Rating  

500mA

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

O-PBCY-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Transistor Application  

AMPLIFIER

Polarity/Channel Type  

NPN

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

400mV

Max Collector Current  

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce  

60 @ 250mA 1V

Current - Collector Cutoff (Max)  

500nA

JEDEC-95 Code  

TO-226AE

Vce Saturation (Max) @ Ib, Ic  

400mV @ 10mA, 250mA

Transition Frequency  

50MHz

Collector Base Voltage (VCBO)  

60V

Emitter Base Voltage (VEBO)  

4V

RoHS Status  

Non-RoHS Compliant

Lead Free  

Contains Lead