Factory Lead Time  

12 Weeks

Contact Plating  

Lead, Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-206AB, TO-46-3 Metal Can

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

50V

Number of Elements  

1

Operating Temperature  

-55°C~200°C TJ

Packaging  

Bulk

Published  

2002

JESD-609 Code  

e0

Pbfree Code  

no

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Max Power Dissipation  

500mW

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Pin Count  

3

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power - Max  

500mW

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

1V

Max Collector Current  

800mA

DC Current Gain (hFE) (Min) @ Ic, Vce  

100 @ 150mA 10V

Current - Collector Cutoff (Max)  

10μA ICBO

Vce Saturation (Max) @ Ib, Ic  

1V @ 50mA, 500mA

Transition Frequency  

300MHz

Collector Base Voltage (VCBO)  

75V

Turn Off Time-Max (toff)  

300ns

Turn On Time-Max (ton)  

35ns

RoHS Status  

Non-RoHS Compliant