Description

The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor with linear and switching capabilities. It comes in the SOT-23 package, which is intended for low-power surface mount applications. The MMBT3904LT1G can be utilized in circuits that require high current density and a wide voltage range. The maximum emitter-base voltage of the MMBT3904LT1G is 6 V. It can dissipate up to 300 mW of power.

 
Features

Package Type: SOT−23 (TO−236)
Transistor Type: NPN
Max Collector Current(IC): 200 mA
Max Collector-Emitter Voltage (VCEO): 40 V
Max Collector-Base Voltage (VCBO): 60 V
Max Emitter-Base Voltage (VEBO): 6 V
Max Power Dissipation (PD): 300 mW
Max Transition Frequency (fT): 300 MHz
DC Current Gain (hFE): 100 - 300
Storage & Operating temperature: -55 to +150 Centigrade
 

Applications

General Purpose Switching
Signal Processing
Industrial
Automotive