Lifecycle Status  

ACTIVE, NOT REC (Last Updated: 4 days ago)

Factory Lead Time  

50 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Number of Pins  

3

Weight  

6.39g

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

650V

Collector-Emitter Saturation Voltage  

2.1V

Number of Elements  

1

Test Conditions  

400V, 40A, 7 Ω, 15V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

HTS Code  

8541.29.00.95

Max Power Dissipation  

268W

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Element Configuration  

Single

Case Connection  

COLLECTOR

Input Type  

Standard

Power - Max  

268W

Transistor Application  

POWER CONTROL

Polarity/Channel Type  

N-CHANNEL

Collector Emitter Voltage (VCEO)  

650V

Max Collector Current  

80A

Reverse Recovery Time  

43 ns

JEDEC-95 Code  

TO-247AB

Turn On Time  

57 ns

Vce(on) (Max) @ Vge, Ic  

2.3V @ 15V, 40A

Turn Off Time-Nom (toff)  

213 ns

IGBT Type  

Trench Field Stop

Gate Charge  

177nC

Current - Collector Pulsed (Icm)  

120A

Td (on/off) @ 25°C  

20ns/144ns

Switching Energy  

1.59mJ (on), 580μJ (off)

Gate-Emitter Voltage-Max  

20V

Gate-Emitter Thr Voltage-Max  

7.5V

Fall Time-Max (tf)  

22ns

Height  

20.82mm

Length  

15.87mm

Width  

4.82mm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free