Factory Lead Time  

20 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

600V

Collector-Emitter Saturation Voltage  

2.35V

Number of Elements  

1

Test Conditions  

400V, 30A, 10 Ω, 15V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Max Power Dissipation  

258W

Base Part Number  

STGP30

Element Configuration  

Single

Power Dissipation  

258W

Case Connection  

COLLECTOR

Input Type  

Standard

Transistor Application  

POWER CONTROL

Polarity/Channel Type  

N-CHANNEL

Collector Emitter Voltage (VCEO)  

600V

Max Collector Current  

60A

Reverse Recovery Time  

53ns

JEDEC-95 Code  

TO-220AB

Turn On Time  

59 ns

Vce(on) (Max) @ Vge, Ic  

2.3V @ 15V, 30A

Turn Off Time-Nom (toff)  

225 ns

IGBT Type  

Trench Field Stop

Gate Charge  

163nC

Current - Collector Pulsed (Icm)  

120A

Td (on/off) @ 25°C  

45ns/189ns

Switching Energy  

383μJ (on), 233μJ (off)

Gate-Emitter Voltage-Max  

20V

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant