Factory Lead Time  

41 Weeks

Mount  

Surface Mount

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Collector-Emitter Breakdown Voltage  

1.2kV

Number of Elements  

1

Test Conditions  

600V, 40A, 15 Ω, 15V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Part Status  

Active

Moisture Sensitivity Level (MSL)  

Not Applicable

Number of Terminations  

3

ECCN Code  

EAR99

Max Power Dissipation  

468W

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STGW40

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Case Connection  

COLLECTOR

Input Type  

Standard

Power - Max  

468W

Transistor Application  

POWER CONTROL

Polarity/Channel Type  

N-CHANNEL

Collector Emitter Voltage (VCEO)  

2.15V

Max Collector Current  

80A

Reverse Recovery Time  

355 ns

Voltage - Collector Emitter Breakdown (Max)  

1200V

Turn On Time  

50 ns

Vce(on) (Max) @ Vge, Ic  

2.15V @ 15V, 40A

Turn Off Time-Nom (toff)  

158.46 ns

IGBT Type  

Trench Field Stop

Gate Charge  

129nC

Current - Collector Pulsed (Icm)  

160A

Td (on/off) @ 25°C  

35ns/148ns

Switching Energy  

1.43mJ (on), 3.83mJ (off)

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant