Mounting Type  

Through Hole

Package / Case  

TO-220-3

Supplier Device Package  

TO-220

Package  

Tube

Current - Continuous Drain (Id) @ 25℃  

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

STMicroelectronics

Power Dissipation (Max)  

140W (Tc)

Product Status  

Active

Unit Weight  

0.067021 oz

Factory Pack QuantityFactory Pack Quantity  

1000

Manufacturer  

STMicroelectronics

Brand  

STMicroelectronics

RoHS  

Details

Vds - Drain-Source Breakdown Voltage  

650 V

Vgs th - Gate-Source Threshold Voltage  

3.2 V

Pd - Power Dissipation  

140 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Minimum Operating Temperature  

- 55 C

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Qg - Gate Charge  

32 nC

Rds On - Drain-Source Resistance  

150 mOhms

Id - Continuous Drain Current  

20 A

Operating Temperature  

150°C (TJ)

Series  

-

Packaging  

Tube

Subcategory  

MOSFETs

Technology  

MOSFET (Metal Oxide)

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

150mOhm @ 10A, 10V

Vgs(th) (Max) @ Id  

4.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds  

1239 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs  

32 nC @ 10 V

Drain to Source Voltage (Vdss)  

650 V

Vgs (Max)  

±30V

Product Type  

MOSFET

FET Feature  

-

Product Category  

MOSFET