Factory Lead Time  

18 Weeks

Package / Case  

TO-247-3

Surface Mount  

NO

Number of Terminals  

3

Transistor Element Material  

SILICON

Vds - Drain-Source Breakdown Voltage  

650 V

Typical Turn-On Delay Time  

20 ns

Vgs th - Gate-Source Threshold Voltage  

3.5 V

Pd - Power Dissipation  

391 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 20 V, + 20 V

Unit Weight  

0.211644 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

240

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Part # Aliases  

SP000745036 IPW65R8CFDXK IPW65R080CFDFKSA1

Manufacturer  

Infineon

Brand  

Infineon Technologies

Qg - Gate Charge  

167 nC

Tradename  

CoolMOS

Rds On - Drain-Source Resistance  

72 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

85 ns

Id - Continuous Drain Current  

43.3 A

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Operating Temperature-Min  

-55 °C

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

IPW65R080CFD

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

INFINEON TECHNOLOGIES AG

Risk Rank  

1.26

Part Package Code  

TO-247

Drain Current-Max (ID)  

43.3 A

Series  

CoolMOS CFD2

Packaging  

Tube

Pbfree Code  

Yes

Subcategory  

MOSFETs

Technology  

Si

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Transistor Application  

SWITCHING

Rise Time  

18 ns

Polarity/Channel Type  

N-CHANNEL

Product Type  

MOSFET

Transistor Type  

1 N-Channel

JEDEC-95 Code  

TO-247

Drain Current-Max (Abs) (ID)  

43.3 A

Drain-source On Resistance-Max  

0.08 Ω

Pulsed Drain Current-Max (IDM)  

137 A

DS Breakdown Voltage-Min  

650 V

Avalanche Energy Rating (Eas)  

1160 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

391 W

Product Category  

MOSFET

Width  

5.21 mm

Height  

21.1 mm

Length  

16.13 mm