Package / Case  

TO-206AA, TO-18-3 Metal Can

Mounting Type  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-18 (TO-206AA)

Number of Terminals  

3

Transistor Element Material  

SILICON

Product Status  

Active

Mfr  

Microchip Technology

Package  

Bulk

Vds - Drain-Source Breakdown Voltage  

40 V

Pd - Power Dissipation  

0.36 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Drain-Source Current at Vgs=0  

30 mA

Mounting Styles  

Through Hole

Manufacturer  

Microchip

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

30 Ohms

Maximum Drain Gate Voltage  

40 V

RoHS  

N

Vgs - Gate-Source Breakdown Voltage  

- 40 V

Id - Continuous Drain Current  

- 0.1 nA

Package Description  

CYLINDRICAL, O-MBCY-W3

Part Package Code  

BCY

Risk Rank  

5.69

Ihs Manufacturer  

MICROSEMI CORP

Part Life Cycle Code  

Active

Number of Elements  

1

Package Shape  

ROUND

Manufacturer Part Number  

MX2N4091

Rohs Code  

No

Operating Temperature-Max  

175 °C

Package Body Material  

METAL

Package Style  

CYLINDRICAL

Series  

Military, MIL-PRF-19500/431

Operating Temperature  

-65°C ~ 175°C (TJ)

Packaging  

Bulk

Type  

JFET

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Reach Compliance Code  

compliant

Pin Count  

3

Reference Standard  

MIL-19500

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

Single

Operating Mode  

DEPLETION MODE

Power - Max  

360 mW

FET Type  

N-Channel

Input Capacitance (Ciss) (Max) @ Vds  

16pF @ 20V

Drain to Source Voltage (Vdss)  

40 V

Polarity/Channel Type  

N-CHANNEL

Product Type  

JFETs

JEDEC-95 Code  

TO-206AA

Drain-source On Resistance-Max  

30 Ω

DS Breakdown Voltage-Min  

40 V

FET Technology  

JUNCTION

Feedback Cap-Max (Crss)  

5 pF

Current - Drain (Idss) @ Vds (Vgs=0)  

30 mA @ 20 V

Voltage - Breakdown (V(BR)GSS)  

40 V

Resistance - RDS(On)  

30 Ohms

Product Category  

JFET