Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount  

NO

Transistor Element Material  

SILICON

Number of Elements  

1

Operating Temperature  

-65°C~150°C TJ

JESD-609 Code  

e0

Pbfree Code  

no

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

Vendor Undefined

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

HTS Code  

8541.21.00.95

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Pin Count  

3

JESD-30 Code  

O-PBCY-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Operating Mode  

DEPLETION MODE

Power - Max  

360mW

FET Type  

N-Channel

Transistor Application  

AMPLIFIER

Input Capacitance (Ciss) (Max) @ Vds  

6pF @ 15V

Drain Current-Max (Abs) (ID)  

0.005A

DS Breakdown Voltage-Min  

30V

FET Technology  

JUNCTION

Power Dissipation-Max (Abs)  

0.36W

Feedback Cap-Max (Crss)  

2 pF

Highest Frequency Band  

VERY HIGH FREQUENCY B

Current - Drain (Idss) @ Vds (Vgs=0)  

2.5mA @ 15V

Voltage - Cutoff (VGS off) @ Id  

800mV @ 100nA

Voltage - Breakdown (V(BR)GSS)  

30V

Resistance - RDS(On)  

375Ohm

Power Gain-Min (Gp)  

5dB

RoHS Status  

RoHS Compliant