Mounting Type  

Through Hole

Package / Case  

TO-247-3

Supplier Device Package  

TO-247 [B]

Package  

Tube

Base Product Number  

APT18M100

Current - Continuous Drain (Id) @ 25℃  

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

625W (Tc)

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

1 kV

Typical Turn-On Delay Time  

22 ns

Vgs th - Gate-Source Threshold Voltage  

4 V

Pd - Power Dissipation  

625 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

0.211644 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Forward Transconductance - Min  

19 S

Channel Mode  

Enhancement

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

150 nC

Tradename  

Power MOS 8

Rds On - Drain-Source Resistance  

600 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

75 ns

Id - Continuous Drain Current  

18 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

Packaging  

Tube

Subcategory  

MOSFETs

Technology  

MOSFET (Metal Oxide)

Configuration  

Single

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

700mOhm @ 9A, 10V

Vgs(th) (Max) @ Id  

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

4845 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

150 nC @ 10 V

Rise Time  

20 ns

Drain to Source Voltage (Vdss)  

1000 V

Vgs (Max)  

±30V

Product Type  

MOSFET

FET Feature  

-

Product Category  

MOSFET

Width  

16.26 mm

Height  

5.31 mm

Length  

21.46 mm