Package / Case  

D3PAK-3

Mounting Type  

Surface Mount

Supplier Device Package  

TO-268

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

56 nC

Rds On - Drain-Source Resistance  

60 mOhms

Typical Turn-Off Delay Time  

25 ns, 26 ns

Id - Continuous Drain Current  

37 A

Vds - Drain-Source Breakdown Voltage  

700 V

Typical Turn-On Delay Time  

18 ns, 20 ns

Vgs th - Gate-Source Threshold Voltage  

2.4 V

Pd - Power Dissipation  

130 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 10 V, + 23 V

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

SMD/SMT

Channel Mode  

Enhancement

Manufacturer  

Microchip

Package  

Bulk

Base Product Number  

MSC060

Current - Continuous Drain (Id) @ 25℃  

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

20V

Mfr  

Microchip Technology

Power Dissipation (Max)  

130W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.4V @ 1mA

Packaging  

Tube

Operating Temperature  

-55°C ~ 175°C (TJ)

Series  

-

Subcategory  

MOSFETs

Technology  

Si

Configuration  

Single

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

75mOhm @ 20A, 20V

Input Capacitance (Ciss) (Max) @ Vds  

1175 pF @ 700 V

Gate Charge (Qg) (Max) @ Vgs  

56 nC @ 20 V

Drain to Source Voltage (Vdss)  

700 V

Vgs (Max)  

+23V, -10V

Product Type  

MOSFET

FET Feature  

-

Product Category  

MOSFET