Lifecycle Status  

Production (Last Updated: 2 months ago)

Mounting Type  

Through Hole

Package / Case  

TO-78-6 Metal Can

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

6

Supplier Device Package  

TO-78-6

Number of Terminals  

8

Transistor Element Material  

SILICON

Package  

Bulk

Current-Collector (Ic) (Max)  

50mA

Base Product Number  

2N380

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

5 V

Pd - Power Dissipation  

350 mW

Transistor Polarity  

PNP

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

150 at 100 uA, 5 VDC

Collector-Emitter Saturation Voltage  

250 mV

Unit Weight  

0.167022 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

50 mA

DC Current Gain hFE Max  

450 at 100 uA, 5 VDC

RoHS  

N

Collector- Emitter Voltage VCEO Max  

60 V

Schedule B  

8541210080, 8541210080/8541210080, 8541210080/8541210080/8541210080, 8541210080/8541210080/8541210080/8541210080

Collector-Emitter Breakdown Voltage  

60 V

Number of Elements  

2

Package Description  

CYLINDRICAL, O-MBCY-W8

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

200 °C

Rohs Code  

No

Transition Frequency-Nom (fT)  

100 MHz

Manufacturer Part Number  

2N3810

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.4

Part Package Code  

TO-78

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Max Operating Temperature  

200 °C

Min Operating Temperature  

-65 °C

HTS Code  

8541.21.00.95

Subcategory  

Transistors

Max Power Dissipation  

350 mW

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

8

JESD-30 Code  

O-MBCY-W8

Qualification Status  

Not Qualified

Polarity  

PNP

Configuration  

Dual

Power Dissipation  

350 mW

Power - Max  

350mW

Transistor Application  

AMPLIFIER

Polarity/Channel Type  

PNP

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

2 PNP (Dual)

Collector Emitter Voltage (VCEO)  

60 V

Max Collector Current  

50 mA

DC Current Gain (hFE) (Min) @ Ic, Vce  

150 @ 1mA, 5V

Current - Collector Cutoff (Max)  

10µA (ICBO)

JEDEC-95 Code  

TO-78

Vce Saturation (Max) @ Ib, Ic  

250mV @ 100µA, 1mA

Voltage - Collector Emitter Breakdown (Max)  

60V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

60 V

Emitter Base Voltage (VEBO)  

5 V

Collector Current-Max (IC)  

0.05 A

DC Current Gain-Min (hFE)  

125

Collector-Emitter Voltage-Max  

60 V

Product Category  

Bipolar Transistors - BJT

Radiation Hardening  

No