Lifecycle Status  

Production (Last Updated: 1 month ago)

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-204AA, TO-3

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-3 (TO-204AA)

Number of Terminals  

2

Transistor Element Material  

SILICON

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

RoHS  

Non-Compliant

Factory Pack QuantityFactory Pack Quantity  

1

Manufacturer  

Microchip

Brand  

Microchip / Microsemi

Package  

Bulk

Current-Collector (Ic) (Max)  

20 A

Mfr  

Microchip Technology

Product Status  

Discontinued at Digi-Key

Package Description  

SIMILAR TO TO-3, 2 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Operating Temperature-Min  

-65 °C

Operating Temperature-Max  

200 °C

Transition Frequency-Nom (fT)  

0.2 MHz

Manufacturer Part Number  

JAN2N3772

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.21

Part Package Code  

TO-204AA

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

Military, MIL-PRF-19500/518

JESD-609 Code  

e0

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Max Operating Temperature  

125 °C

Min Operating Temperature  

-55 °C

HTS Code  

8541.29.00.95

Subcategory  

Transistors

Max Power Dissipation  

6 W

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Reach Compliance Code  

compliant

Pin Count  

2

Reference Standard  

MIL-19500/413C

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Qualified

Configuration  

SINGLE

Case Connection  

COLLECTOR

Power - Max  

6 W

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

60 V

Max Collector Current  

20 A

DC Current Gain (hFE) (Min) @ Ic, Vce  

15 @ 10A, 4V

Current - Collector Cutoff (Max)  

5mA

Vce Saturation (Max) @ Ib, Ic  

4V @ 4A, 20A

Voltage - Collector Emitter Breakdown (Max)  

60 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

100 V

Power Dissipation-Max (Abs)  

150 W

Collector Current-Max (IC)  

20 A

DC Current Gain-Min (hFE)  

15

Collector-Emitter Voltage-Max  

60 V

Product Category  

Bipolar Transistors - BJT

Radiation Hardening  

No