Package / Case  

TO-251-3

Vds - Drain-Source Breakdown Voltage  

500 V

Typical Turn-On Delay Time  

6.5 ns

Vgs th - Gate-Source Threshold Voltage  

2.5 V

Pd - Power Dissipation  

42 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 20 V, + 20 V

Unit Weight  

0.011993 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1500

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Part # Aliases  

SP001022958 IPU50R1K4CEBKMA1

Manufacturer  

Infineon

Brand  

Infineon Technologies

Qg - Gate Charge  

8.2 nC

Tradename  

CoolMOS

Rds On - Drain-Source Resistance  

1.26 Ohms

RoHS  

Details

Typical Turn-Off Delay Time  

23 ns

Id - Continuous Drain Current  

4.8 A

Series  

CoolMOS CE

Packaging  

Tube

Subcategory  

MOSFETs

Technology  

Si

Configuration  

Single

Number of Channels  

1 Channel

Rise Time  

6 ns

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Product Category  

MOSFET

Width  

2.38 mm

Height  

6.22 mm

Length  

6.73 mm