Package / Case  

TO-3PN-3

Mounting Type  

Through Hole

Material - Insulation  

Polybutylene Terephthalate (PBT), Glass Filled

Vds - Drain-Source Breakdown Voltage  

600 V

Typical Turn-On Delay Time  

185 ns

Vgs th - Gate-Source Threshold Voltage  

3 V

Pd - Power Dissipation  

417 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

0.162260 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

30

Mounting Styles  

Through Hole

Forward Transconductance - Min  

40 S

Channel Mode  

Enhancement

Manufacturer  

onsemi

Brand  

onsemi / Fairchild

Qg - Gate Charge  

270 nC

Tradename  

SuperFET

Rds On - Drain-Source Resistance  

70 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

520 ns

Id - Continuous Drain Current  

47 A

Package  

Bulk

Base Product Number  

-

Mfr  

TE Connectivity Erni

Product Status  

Active

Series  

FCA47N60

Packaging  

Tube

Operating Temperature  

-55°C ~ 125°C

Termination  

Solder

Connector Type  

Receptacle, Female Sockets

Type  

N-Channel MOSFET

Number of Positions  

96

Number of Rows  

3

Subcategory  

MOSFETs

Current Rating (Amps)  

-

Pitch  

0.100 (2.54mm)

Technology  

Si

Style  

C

Number of Positions Loaded  

All

Contact Finish  

Gold

Configuration  

Single

Number of Channels  

1 Channel

Rise Time  

210 ns

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Level, Class  

1

Features  

-

Product Category  

MOSFET

Width  

5 mm

Height  

20.1 mm

Length  

16.2 mm

Contact Finish Thickness  

-

Material Flammability Rating  

UL94 V-0