Package / Case  

TO-206AA, TO-18-3 Metal Can

Mounting Type  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-18 (TO-206AA)

Number of Terminals  

3

Transistor Element Material  

SILICON

Type of electrical connection of main circuit  

Screw connection

Degree of protection (IP), front side  

IP40

Cable entry  

Side

Rated permanent current Iu  

630

Type of control element  

Long turning handle

Product Status  

Active

Mfr  

Microchip Technology

Current-Collector (Ic) (Max)  

1 A

Package  

Bag

Pd - Power Dissipation  

1.8 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

60

Collector-Emitter Saturation Voltage  

600 mV

Unit Weight  

0.022642 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

120 MHz

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

1 A

DC Current Gain hFE Max  

200

RoHS  

N

Collector- Emitter Voltage VCEO Max  

90 V

Package Description  

CYLINDRICAL, O-MBCY-W3

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

No

Transition Frequency-Nom (fT)  

120 MHz

Manufacturer Part Number  

2N2896

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.27

Series  

-

Operating Temperature  

-

Packaging  

Bulk

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

Single

Power - Max  

1.8 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

60 @ 150mA, 10V

Current - Collector Cutoff (Max)  

10nA (ICBO)

JEDEC-95 Code  

TO-206AA

Vce Saturation (Max) @ Ib, Ic  

600mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)  

90 V

Frequency - Transition  

120MHz

Collector Current-Max (IC)  

1 A

DC Current Gain-Min (hFE)  

60

Collector-Emitter Voltage-Max  

90 V

Product Category  

Bipolar Transistors - BJT