Package / Case  

TO-66-2

Mounting Type  

Through Hole

Supplier Device Package  

TO-66 (TO-213AA)

Package  

Bulk

Mfr  

KYOCERA AVX

Product Status  

Active

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

35 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

25

Collector-Emitter Saturation Voltage  

750 mV

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Manufacturer  

Microchip

Brand  

Microchip / Microsemi

Maximum DC Collector Current  

2 A

DC Current Gain hFE Max  

100

RoHS  

N

Collector- Emitter Voltage VCEO Max  

250 V

Current-Collector (Ic) (Max)  

2 A

Series  

*

Packaging  

Tray

Operating Temperature  

-65°C ~ 200°C (TJ)

Subcategory  

Transistors

Technology  

Si

Configuration  

Single

Power - Max  

2.5 W

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

25 @ 1A, 10V

Current - Collector Cutoff (Max)  

5mA

Vce Saturation (Max) @ Ib, Ic  

750mV @ 125mA, 1A

Voltage - Collector Emitter Breakdown (Max)  

250 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

375 V

Continuous Collector Current  

2 A

Product Category  

Bipolar Transistors - BJT