Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-220AB

Number of Terminals  

3

Transistor Element Material  

SILICON

Continuous Drain Current Id  

22

Number of Elements  

1

RoHS  

Non-Compliant

Package  

Tube

Current - Continuous Drain (Id) @ 25℃  

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

onsemi

Power Dissipation (Max)  

150W (Tc)

Product Status  

Obsolete

Package Style  

FLANGE MOUNT

Moisture Sensitivity Levels  

NOT SPECIFIED

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

30

Rohs Code  

No

Manufacturer Part Number  

IRF540

Package Shape  

RECTANGULAR

Manufacturer  

Rochester Electronics LLC

Part Life Cycle Code  

Active

Ihs Manufacturer  

ROCHESTER ELECTRONICS LLC

Risk Rank  

5.02

Drain Current-Max (ID)  

28 A

Operating Temperature  

-55°C ~ 175°C (TJ)

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

Terminal Finish  

TIN LEAD

Max Operating Temperature  

175 °C

Min Operating Temperature  

-55 °C

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

240

Reach Compliance Code  

unknown

JESD-30 Code  

R-PSFM-T3

Qualification Status  

COMMERCIAL

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

120 W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

77mOhm @ 17A, 10V

Vgs(th) (Max) @ Id  

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds  

1700 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

72 nC @ 10 V

Drain to Source Voltage (Vdss)  

100 V

Vgs (Max)  

±20V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

28 A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20 V

Drain-source On Resistance-Max  

0.077 Ω

Pulsed Drain Current-Max (IDM)  

110 A

DS Breakdown Voltage-Min  

100 V

Avalanche Energy Rating (Eas)  

230 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-