Mounting Type  

Through Hole

Package / Case  

HiP-247-3

Supplier Device Package  

HiP247™

Housing Material  

Glass Filled Polyamide

Manufacturer Part Number  

831612B3.FC

Approvals  

NF;UL;cUL

Manufacturer  

Crouzet

Continuous Drain Current Id  

7

Number of Elements per Chip  

1

Package Type  

HiP247

Channel Mode  

Enhancement

Vds - Drain-Source Breakdown Voltage  

1.7 kV

Vgs th - Gate-Source Threshold Voltage  

2.1 V

Pd - Power Dissipation  

120 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 200 C

Vgs - Gate-Source Voltage  

- 10 V, + 25 V

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

600

Mounting Styles  

Through Hole

Brand  

STMicroelectronics

Qg - Gate Charge  

14 nC

Rds On - Drain-Source Resistance  

1 Ohms

RoHS  

Details

Id - Continuous Drain Current  

6 A

Package  

Tube

Base Product Number  

SCT1000

Current - Continuous Drain (Id) @ 25℃  

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

20V

Mfr  

STMicroelectronics

Power Dissipation (Max)  

96W (Tc)

Product Status  

Active

Series  

SCT1000N170

Packaging  

Tube

Operating Temperature  

-55°C ~ 200°C (TJ)

Subcategory  

MOSFETs

Technology  

Si

Pin Count  

3

Actuator Type  

Flat Lever

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

96

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

1.3Ohm @ 3A, 20V

Vgs(th) (Max) @ Id  

3.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

133 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs  

13.3 nC @ 20 V

Drain to Source Voltage (Vdss)  

1700 V

Vgs (Max)  

+22V, -10V

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Channel Type  

N Channel

FET Feature  

-

Connection Type  

Quick Connect Terminals

Product Category  

MOSFET

Contacts  

FORM B (SPNC)