Package / Case  

QFN

Mounting Type  

Surface Mount

Number of Pins  

4

Supplier Device Package  

TO-268

Product Depth (mm)  

5(mm)

Operating Temp Range  

-40C to 85C

Mounting Styles  

Surface Mount

Vds - Drain-Source Breakdown Voltage  

1.2 kV

Typical Turn-On Delay Time  

4 ns, 5 ns

Vgs th - Gate-Source Threshold Voltage  

2.8 V

Pd - Power Dissipation  

182 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 10 V, + 23 V

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Channel Mode  

Enhancement

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

64 nC

Rds On - Drain-Source Resistance  

80 mOhms

Typical Turn-Off Delay Time  

21 ns, 24 ns

Id - Continuous Drain Current  

35 A

Package  

Tube

Base Product Number  

MSC080

Current - Continuous Drain (Id) @ 25℃  

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

20V

Mfr  

Microchip Technology

Power Dissipation (Max)  

182W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.8V @ 1mA

Usage Level  

Industrial grade

Packaging  

Bulk

Operating Temperature  

-55°C ~ 175°C (TJ)

Series  

-

Subcategory  

MOSFETs

Technology  

Si

Configuration  

Single

Number of Channels  

1 Channel

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

100mOhm @ 15A, 20V

Input Capacitance (Ciss) (Max) @ Vds  

838 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs  

64 nC @ 20 V

Rise Time  

4 ns

Drain to Source Voltage (Vdss)  

1200 V

Vgs (Max)  

+23V, -10V

Product Type  

MOSFET

Screening Level  

Industrial

FET Feature  

-

Product Category  

MOSFET

Product Length (mm)  

7(mm)

Product Height (mm)  

0.9(mm)