Package / Case  

TO-18-3

Mounting Type  

Through Hole

Supplier Device Package  

TO-18

Transistor Polarity  

NPN

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

500 mW

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

75 at 1mA, 10 VDC

Collector-Emitter Saturation Voltage  

1 V

Unit Weight  

0.082453 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

800 mA

DC Current Gain hFE Max  

325 at 1 mA, 10 VDC

RoHS  

N

Collector- Emitter Voltage VCEO Max  

50 V

Package  

Bulk

Current-Collector (Ic) (Max)  

800 mA

Base Product Number  

2N2222

Mfr  

Microchip Technology

Product Status  

Active

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Subcategory  

Transistors

Technology  

Si

Configuration  

Single

Power Dissipation  

500

Power - Max  

500 mW

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

100 @ 150mA, 10V

Current - Collector Cutoff (Max)  

50nA

Vce Saturation (Max) @ Ib, Ic  

1V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max)  

50 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

75 V

Continuous Collector Current  

800

Product Category  

Bipolar Transistors - BJT