Mounting Type  

Through Hole

Package / Case  

TO-206AA, TO-18-3 Metal Can

Surface Mount  

NO

Supplier Device Package  

TO-18

Number of Terminals  

3

Transistor Element Material  

SILICON

Transistor Polarity  

NPN

Emitter-Base Voltage  

7(V)

Package Type  

TO-18

Collector-Base Voltage  

140(V)

Category  

Bipolar Power

Operating Temp Range  

-65C to 200C

Collector Current (DC)  

1(A)

Number of Elements  

1

Rad Hardened  

No

DC Current Gain  

50

Mounting  

Through Hole

Package  

Bulk

Current-Collector (Ic) (Max)  

1 A

Base Product Number  

2N3700

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

7 V

Pd - Power Dissipation  

1 W

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

15

Collector-Emitter Saturation Voltage  

500 mV

Unit Weight  

0.150752 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

1 A

DC Current Gain hFE Max  

300

RoHS  

N

Collector- Emitter Voltage VCEO Max  

80 V

Package Description  

CYLINDRICAL, O-MBCY-W3

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Operating Temperature-Min  

-65 °C

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Transition Frequency-Nom (fT)  

100 MHz

Manufacturer Part Number  

2N3700

Package Shape  

ROUND

Part Life Cycle Code  

Contact Manufacturer

Ihs Manufacturer  

SPC TECHNOLOGY/ MULTICOMP

Risk Rank  

4.7

Packaging  

Bag

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

ECCN Code  

EAR99

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

3

JESD-30 Code  

O-MBCY-W3

Configuration  

Single

Power Dissipation  

1

Output Power  

Not Required(W)

Power - Max  

500 mW

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

50 @ 500mA, 10V

Current - Collector Cutoff (Max)  

10nA

JEDEC-95 Code  

TO-18

Vce Saturation (Max) @ Ib, Ic  

500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max)  

80 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

140 V

Collector Current-Max (IC)  

1 A

DC Current Gain-Min (hFE)  

15

Continuous Collector Current  

1

Collector-Emitter Voltage-Max  

80 V

Product Category  

Bipolar Transistors - BJT