Mounting Type  

Through Hole

Package / Case  

TO-206AA, TO-18-3 Metal Can

Supplier Device Package  

TO-18 (TO-206AA)

Package  

Bulk

Mfr  

Microchip Technology

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

40 V

Pd - Power Dissipation  

0.36 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Minimum Operating Temperature  

- 65 C

Drain-Source Current at Vgs=0  

8 mA

Mounting Styles  

Through Hole

Rds On - Drain-Source Resistance  

80 Ohms

Vgs - Gate-Source Breakdown Voltage  

- 40 V

Id - Continuous Drain Current  

- 0.1 nA

Operating Temperature  

-65°C ~ 175°C (TJ)

Series  

Military, MIL-PRF-19500/431

Technology  

Si

Configuration  

Single

Power - Max  

360 mW

FET Type  

N-Channel

Input Capacitance (Ciss) (Max) @ Vds  

16pF @ 20V

Drain to Source Voltage (Vdss)  

40 V

Current - Drain (Idss) @ Vds (Vgs=0)  

8 mA @ 20 V

Voltage - Breakdown (V(BR)GSS)  

40 V

Resistance - RDS(On)  

80 Ohms