Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Supplier Device Package  

D3Pak

Manufacturer Part Number  

924

Manufacturer  

IDEAL Industries

Number of Elements  

1

RoHS  

Compliant

Turn Off Delay Time  

110 ns

Package  

Bulk

Base Product Number  

APT77N60

Current - Continuous Drain (Id) @ 25℃  

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

481W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.6V @ 2.96mA

Vds - Drain-Source Breakdown Voltage  

600 V

Typical Turn-On Delay Time  

18 ns

Vgs th - Gate-Source Threshold Voltage  

2.5 V

Pd - Power Dissipation  

481 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 20 V, + 20 V

Unit Weight  

0.218699 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

SMD/SMT

Channel Mode  

Enhancement

Brand  

Microchip Technology

Qg - Gate Charge  

260 nC

Rds On - Drain-Source Resistance  

37 mOhms

Typical Turn-Off Delay Time  

110 ns

Id - Continuous Drain Current  

77 A

Packaging  

Bulk

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

CoolMOS™

Part Status  

Production (Last Updated: 1 month ago)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Subcategory  

MOSFETs

Max Power Dissipation  

481 W

Technology  

MOSFET (Metal Oxide)

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

481 W

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

41mOhm @ 44.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

13600 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

260 nC @ 10 V

Rise Time  

27 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±20V

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Continuous Drain Current (ID)  

77 A

Gate to Source Voltage (Vgs)  

20 V

Input Capacitance  

13.6 nF

FET Feature  

-

Rds On Max  

41 mΩ

Product Category  

MOSFET

Radiation Hardening  

No