Lifecycle Status  

Production (Last Updated: 2 months ago)

Mounting Type  

Through Hole

Package / Case  

TO-247-3 Variant

Mount  

Through Hole

Number of Pins  

3

Supplier Device Package  

T-MAX™

Package  

JHSN_DRIV_VSD-II

Manufacturer Part Number  

VS211132B-0P7L3

Manufacturer  

Johnson Controls

Mounting  

Panel

Base Product Number  

APT56M50

Current - Continuous Drain (Id) @ 25℃  

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

780W (Tc)

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

500 V

Typical Turn-On Delay Time  

38 ns

Vgs th - Gate-Source Threshold Voltage  

4 V

Pd - Power Dissipation  

780 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

0.208116 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Forward Transconductance - Min  

43 S

Channel Mode  

Enhancement

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

220 nC

Tradename  

Power MOS 8

Rds On - Drain-Source Resistance  

85 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

100 ns

Id - Continuous Drain Current  

56 A

Number of Elements  

1

Voltage Rating (DC)  

500 V

Turn Off Delay Time  

100 ns

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

Packaging  

Tube

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Subcategory  

MOSFETs

Max Power Dissipation  

780 W

Technology  

MOSFET (Metal Oxide)

Depth  

21.3125

Current Rating  

56 A

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

780 W

Turn On Delay Time  

38 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

100mOhm @ 28A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

8800 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

220 nC @ 10 V

Rise Time  

45 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Product Type  

MOSFET

Continuous Drain Current (ID)  

56 A

Gate to Source Voltage (Vgs)  

30 V

Max Frequency  

320 Hz

Drain to Source Breakdown Voltage  

500 V

Input Capacitance  

8.8 nF

FET Feature  

-

Drain to Source Resistance  

85 mΩ

Rds On Max  

100 mΩ

Nominal Input Voltage (AC)  

208 VAC

Product Category  

MOSFET

Width  

40

Height  

5.31 mm

Length  

21.46 mm

Radiation Hardening  

No

Lead Free  

Lead Free