Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Surface Mount  

NO

Supplier Device Package  

ISOTOP®

Number of Terminals  

4

Transistor Element Material  

SILICON

Manufacturer  

ABB

Package  

Tube

Base Product Number  

APT8020

Current - Continuous Drain (Id) @ 25℃  

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

520W (Tc)

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

800 V

Typical Turn-On Delay Time  

12 ns

Vgs th - Gate-Source Threshold Voltage  

3 V

Pd - Power Dissipation  

520 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

1.058219 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mounts

Brand  

Microchip Technology

Tradename  

POWER MOS 7, ISOTOP

Rds On - Drain-Source Resistance  

200 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

39 ns

Id - Continuous Drain Current  

33 A

Package Description  

ISOTOP-4

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

ISOTOP

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT8020JLL

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.4

Part Package Code  

ISOTOP

Drain Current-Max (ID)  

33 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 7®

Packaging  

Tube

JESD-609 Code  

e1

Pbfree Code  

Yes

Type  

MOSFET

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Subcategory  

Discrete Semiconductor Modules

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

4

JESD-30 Code  

R-PUFM-X4

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

200mOhm @ 16.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

5200 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

195 nC @ 10 V

Rise Time  

14 ns

Drain to Source Voltage (Vdss)  

800 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Product Type  

Discrete Semiconductor Modules

Drain Current-Max (Abs) (ID)  

33 A

Drain-source On Resistance-Max  

0.2 Ω

Pulsed Drain Current-Max (IDM)  

142 A

DS Breakdown Voltage-Min  

800 V

Avalanche Energy Rating (Eas)  

3000 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

520 W

FET Feature  

-

Product  

Power MOSFET Modules

Product Category  

Discrete Semiconductor Modules

Width  

25.4 mm

Height  

9.6 mm

Length  

38.2 mm