Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Mount  

Chassis Mount, Screw

Surface Mount  

NO

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Number of Terminals  

4

Transistor Element Material  

SILICON

Manufacturer Part Number  

78101197459

Manufacturer  

Cooper

Package  

Tube

Base Product Number  

APT39F60

Current - Continuous Drain (Id) @ 25℃  

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

480W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

1.030000 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mounts

Brand  

Microchip Technology

RoHS  

Details

Number of Elements  

1

Turn Off Delay Time  

190 ns

Package Description  

ISOTOP-4

Package Style  

FLANGE MOUNT

Package Body Material  

UNSPECIFIED

Manufacturer Package Code  

ISOTOP

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

2.33

Part Package Code  

ISOTOP

Drain Current-Max (ID)  

42 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Packaging  

Tube

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 2 months ago)

Type  

MOSFET

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNISED

Subcategory  

Discrete Semiconductor Modules

Max Power Dissipation  

480 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

JESD-30 Code  

R-XUFM-X4

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

480 W

Case Connection  

ISOLATED

Turn On Delay Time  

65 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

110mOhm @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

11300 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

280 nC @ 10 V

Rise Time  

75 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Product Type  

Discrete Semiconductor Modules

Continuous Drain Current (ID)  

42 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.11 Ω

Pulsed Drain Current-Max (IDM)  

210 A

Input Capacitance  

11.3 nF

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

1580 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Rds On Max  

110 mΩ

Product  

Power MOSFET Modules

Product Category  

Discrete Semiconductor Modules

Radiation Hardening  

No

REACH SVHC  

unknown