Mounting Type  

Surface Mount

Package / Case  

4-SMD, No Lead

Surface Mount  

YES

Supplier Device Package  

UA

Number of Terminals  

4

Transistor Element Material  

SILICON

Package  

Tray

Current-Collector (Ic) (Max)  

800 mA

Base Product Number  

2N2222

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

650 mW

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

75

Collector-Emitter Saturation Voltage  

1 V

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

SMD/SMT

Manufacturer  

Microchip

Brand  

Microchip / Microsemi

DC Current Gain hFE Max  

325

RoHS  

N

Collector- Emitter Voltage VCEO Max  

50 V

Package Description  

SMALL OUTLINE, R-CDSO-N4

Package Style  

SMALL OUTLINE

Package Body Material  

CERAMIC, METAL-SEALED COFIRED

Operating Temperature-Max  

200 °C

Rohs Code  

No

Manufacturer Part Number  

JANSF2N2222AUA

Turn-on Time-Max (ton)  

35 ns

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Turn-off Time-Max (toff)  

300 ns

Risk Rank  

5.04

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

Military, MIL-PRF-19500/255

Pbfree Code  

No

ECCN Code  

EAR99

HTS Code  

8541.21.00.95

Subcategory  

Transistors

Technology  

Si

Terminal Position  

DUAL

Terminal Form  

NO LEAD

Reach Compliance Code  

compliant

Reference Standard  

MIL-19500/255

JESD-30 Code  

R-CDSO-N4

Qualification Status  

Qualified

Configuration  

Single

Power - Max  

650 mW

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

100 @ 150mA, 10V

Current - Collector Cutoff (Max)  

50nA

Vce Saturation (Max) @ Ib, Ic  

1V @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max)  

50 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

75 V

Collector Current-Max (IC)  

0.8 A

DC Current Gain-Min (hFE)  

30

Continuous Collector Current  

800 mA

Collector-Emitter Voltage-Max  

50 V

Product Category  

Bipolar Transistors - BJT