Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

TO-205AA, TO-5-3 Metal Can

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-5AA

Number of Terminals  

3

Transistor Element Material  

SILICON

Package  

Bulk

Current-Collector (Ic) (Max)  

2 A

Base Product Number  

2N5152

Mfr  

Microchip Technology

Product Status  

Active

Factory Pack QuantityFactory Pack Quantity  

1

Manufacturer  

Microchip

Brand  

Microchip Technology

RoHS  

N

Package Description  

TO-5, 3 PIN

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

200 °C

Rohs Code  

No

Manufacturer Part Number  

2N5152L

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.22

Part Package Code  

TO-5

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Max Operating Temperature  

200 °C

Min Operating Temperature  

-65 °C

HTS Code  

8541.29.00.95

Subcategory  

Transistors

Max Power Dissipation  

1 W

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

3

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power - Max  

1 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

80 V

Max Collector Current  

2 A

DC Current Gain (hFE) (Min) @ Ic, Vce  

30 @ 2.5A, 5V

Current - Collector Cutoff (Max)  

50µA

JEDEC-95 Code  

TO-5

Vce Saturation (Max) @ Ib, Ic  

1.5V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)  

80 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

100 V

Power Dissipation-Max (Abs)  

11.8 W

Collector Current-Max (IC)  

2 A

DC Current Gain-Min (hFE)  

30

Collector-Emitter Voltage-Max  

80 V

Product Category  

Bipolar Transistors - BJT

Radiation Hardening  

No