Lifecycle Status  

Production (Last Updated: 2 months ago)

Mounting Type  

Surface Mount

Package / Case  

HC-49/US

Mount  

Chassis Mount, Screw

Surface Mount  

NO

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Number of Terminals  

4

Transistor Element Material  

SILICON

Package  

Bulk

Mfr  

Suntsu Electronics, Inc.

Product Status  

Active

Base Product Number  

APT58F50

Current - Continuous Drain (Id) @ 25℃  

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

540W (Tc)

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Number of Elements  

1

RoHS  

Compliant

Package Description  

ROHS COMPLIANT, ISOTOP-4

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

ISOTOP

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT58F50J

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.37

Part Package Code  

ISOTOP

Drain Current-Max (ID)  

58 A

Operating Temperature  

-10°C ~ 70°C

Series  

SXTHM2

Size / Dimension  

0.524 L x 0.197 W (13.30mm x 5.00mm)

Pbfree Code  

Yes

Type  

MHz Crystal

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED

Max Power Dissipation  

540 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Frequency  

24 MHz

Frequency Stability  

±50ppm

Pin Count  

4

JESD-30 Code  

R-PUFM-X4

Qualification Status  

Not Qualified

ESR (Equivalent Series Resistance)  

30 Ohms

Configuration  

SINGLE WITH BUILT-IN DIODE

Load Capacitance  

19pF

Operating Mode  

Fundamental

Power Dissipation  

540 W

Case Connection  

ISOLATED

Frequency Tolerance  

±50ppm

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

65mOhm @ 42A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

13500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

340 nC @ 10 V

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

58 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.065 Ω

Pulsed Drain Current-Max (IDM)  

270 A

Input Capacitance  

13.5 nF

DS Breakdown Voltage-Min  

500 V

Avalanche Energy Rating (Eas)  

1845 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Rds On Max  

65 mΩ

Height Seated (Max)  

0.177 (4.50mm)