Mounting Type  

Surface Mount

Package / Case  

HC-49/US

Surface Mount  

NO

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Number of Terminals  

4

Transistor Element Material  

SILICON

Package  

Bulk

Mfr  

Suntsu Electronics, Inc.

Product Status  

Active

Base Product Number  

APL602

Current - Continuous Drain (Id) @ 25℃  

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

12V

Power Dissipation (Max)  

565W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 2.5mA

Package Description  

FLANGE MOUNT, R-PUFM-X4

Package Style  

FLANGE MOUNT

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

ISOTOP

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APL602J

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Drain Current-Max (ID)  

43 A

Part Package Code  

ISOTOP

Risk Rank  

5.28

Operating Temperature  

-30°C ~ 85°C

Series  

SXTHM2

Size / Dimension  

0.524 L x 0.197 W (13.30mm x 5.00mm)

JESD-609 Code  

e1

Type  

MHz Crystal

Terminal Finish  

TIN SILVER COPPER

Additional Feature  

UL RECOGNIZED

Subcategory  

FET General Purpose Power

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Frequency  

30 MHz

Frequency Stability  

±25ppm

JESD-30 Code  

R-PUFM-X4

Qualification Status  

Not Qualified

ESR (Equivalent Series Resistance)  

30 Ohms

Configuration  

SINGLE WITH BUILT-IN DIODE

Load Capacitance  

18pF

Operating Mode  

Fundamental

Case Connection  

ISOLATED

Frequency Tolerance  

±25ppm

FET Type  

N-Channel

Transistor Application  

AMPLIFIER

Rds On (Max) @ Id, Vgs  

125mOhm @ 21.5A, 12V

Input Capacitance (Ciss) (Max) @ Vds  

9000 pF @ 25 V

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Drain Current-Max (Abs) (ID)  

43 A

Drain-source On Resistance-Max  

0.125 Ω

Pulsed Drain Current-Max (IDM)  

172 A

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

3000 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

565 W

FET Feature  

-

Height Seated (Max)  

0.177 (4.50mm)

REACH SVHC  

compliant