Lifecycle Status  

Production (Last Updated: 1 month ago)

Mounting Type  

Free Hanging (In-Line)

Mount  

Through Hole

Package / Case  

TO-247-3 Variant

Surface Mount  

NO

Mounting Feature  

-

Number of Pins  

3

Shell Material  

Aluminum Alloy

Supplier Device Package  

T-MAX™ [B2]

Number of Terminals  

3

Transistor Element Material  

SILICON

Voltage, Rating  

500VAC, 700VDC

Package  

Bulk

Primary Material  

Metal

Base Product Number  

MS3106R20

Mfr  

ITT Cannon, LLC

Product Status  

Active

Contact Finish Mating  

Silver

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Number of Elements  

1

RoHS  

Compliant

Turn Off Delay Time  

225 ns

Current - Continuous Drain (Id) @ 25℃  

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

1135W (Tc)

Package Description  

IN-LINE, R-PSIP-T3

Package Style  

IN-LINE

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT66F60B2

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.47

Drain Current-Max (ID)  

66 A

Operating Temperature  

-55°C ~ 125°C

Series  

Military, MIL-DTL-5015, MS

JESD-609 Code  

e3

Pbfree Code  

Yes

Termination  

Solder Cup

Connector Type  

Plug, Female Sockets

Number of Positions  

11

Terminal Finish  

PURE MATTE TIN

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Color  

Olive Drab

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Fastening Type  

Threaded

Current Rating (Amps)  

22A

Max Power Dissipation  

1.135 kW

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Orientation  

N (Normal)

Terminal Form  

THROUGH-HOLE

Shielding  

-

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Ingress Protection  

Environment Resistant

Reach Compliance Code  

compliant

Shell Finish  

Olive Drab Cadmium

Pin Count  

3

Shell Size - Insert  

20-33

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Shell Size, MIL  

-

Case Connection  

DRAIN

Turn On Delay Time  

75 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

90mOhm @ 33A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

13190 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

330 nC @ 10 V

Rise Time  

85 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

70 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.1 Ω

Pulsed Drain Current-Max (IDM)  

245 A

Input Capacitance  

13.19 nF

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

1845 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Drain to Source Resistance  

75 mΩ

Rds On Max  

90 mΩ

Features  

Backshell, Coupling Nut

Width  

16.26 mm

Height  

5.31 mm

Length  

21.46 mm

Contact Finish Thickness - Mating  

-

Radiation Hardening  

No