Mounting Type  

Free Hanging (In-Line)

Mount  

Through Hole

Package / Case  

TO-247-3 Variant

Surface Mount  

NO

Mounting Feature  

-

Number of Pins  

3

Shell Material  

Aluminum Alloy

Supplier Device Package  

T-MAX™ [B2]

Number of Terminals  

3

Transistor Element Material  

SILICON

Contact Finish Mating  

Silver

Product Status  

Active

Mfr  

ITT Cannon, LLC

Base Product Number  

MS3106R20

Primary Material  

Metal

Package  

Bulk

Voltage, Rating  

500VAC, 700VDC

Number of Elements  

1

RoHS  

Compliant

Turn Off Delay Time  

225 ns

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Current - Continuous Drain (Id) @ 25℃  

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Power Dissipation (Max)  

1135W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Package Description  

IN-LINE, R-PSIP-T3

Package Style  

IN-LINE

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT66F60B2

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.47

Drain Current-Max (ID)  

66 A

Series  

Military, MIL-DTL-5015, MS

Operating Temperature  

-55°C ~ 125°C

JESD-609 Code  

e3

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 1 month ago)

Termination  

Solder Cup

Connector Type  

Plug, Female Sockets

Number of Positions  

11

Terminal Finish  

PURE MATTE TIN

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Color  

Olive Drab

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Fastening Type  

Threaded

Current Rating (Amps)  

22A

Max Power Dissipation  

1.135 kW

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Orientation  

N (Normal)

Terminal Form  

THROUGH-HOLE

Shielding  

-

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Ingress Protection  

Environment Resistant

Shell Finish  

Olive Drab Cadmium

Shell Size - Insert  

20-33

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Shell Size, MIL  

-

Case Connection  

DRAIN

Turn On Delay Time  

75 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

90mOhm @ 33A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

13190 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

330 nC @ 10 V

Rise Time  

85 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

70 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.1 Ω

Pulsed Drain Current-Max (IDM)  

245 A

Input Capacitance  

13.19 nF

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

1845 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Drain to Source Resistance  

75 mΩ

Rds On Max  

90 mΩ

Features  

Backshell, Coupling Nut

Width  

16.26 mm

Height  

5.31 mm

Length  

21.46 mm

Contact Finish Thickness - Mating  

-

Radiation Hardening  

No

REACH SVHC  

compliant