Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Mount  

Surface Mount

Surface Mount  

YES

Number of Pins  

3

Supplier Device Package  

D3Pak

Number of Terminals  

2

Transistor Element Material  

SILICON

Watertight  

No

Manufacturer Part Number  

7765

Approvals  

UL

Manufacturer  

Cooper

Package  

Bulk

Base Product Number  

APT14M100

Current - Continuous Drain (Id) @ 25℃  

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

500W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Number of Elements  

1

RoHS  

Compliant

Package Description  

ROHS COMPLIANT, D3PAK-3

Package Style  

SMALL OUTLINE

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

30

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.19

Drain Current-Max (ID)  

14 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 2 months ago)

ECCN Code  

EAR99

Terminal Finish  

Pure Matte Tin (Sn)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Color  

Metal

Additional Feature  

AVALANCHE RATED

Max Power Dissipation  

500 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Current Rating  

50 Amps

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

500 W

Number of Poles  

3

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

880mOhm @ 7A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3965 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

120 nC @ 10 V

Drain to Source Voltage (Vdss)  

1000 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

14 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.88 Ω

Pulsed Drain Current-Max (IDM)  

55 A

Input Capacitance  

3.965 nF

DS Breakdown Voltage-Min  

1000 V

Avalanche Energy Rating (Eas)  

875 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Rds On Max  

880 mΩ

Connection Type  

Plug

Phase  

1

REACH SVHC  

unknown