Mounting Type  

Through Hole

Package / Case  

TO-205AA, TO-5-3 Metal Can

Surface Mount  

NO

Supplier Device Package  

TO-5

Housing Material  

Aluminum

Number of Terminals  

3

Transistor Element Material  

SILICON

Manufacturer Part Number  

P-D4R62-K3R3

Manufacturer  

Grace Technologies

Current-Collector (Ic) (Max)  

2 A

Base Product Number  

2N5662

Brand  

Microchip Technology

Factory Pack QuantityFactory Pack Quantity  

1

Ihs Manufacturer  

MICROSEMI CORP

Number of Outlets  

(1) 120V Receptacle

Transistor Polarity  

NPN

Package  

Bulk

Mfr  

Microchip Technology

Product Status  

Active

RoHS  

N

Package Description  

CYLINDRICAL, O-MBCY-W3

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

200 °C

Rohs Code  

No

Turn-on Time-Max (ton)  

250 ns

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Turn-off Time-Max (toff)  

850 ns

Risk Rank  

5.25

Part Package Code  

TO-5

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

HTS Code  

8541.29.00.95

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Pin Count  

3

Reference Standard  

MIL-19500

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power - Max  

1 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

40 @ 500mA, 5V

Current - Collector Cutoff (Max)  

200nA

JEDEC-95 Code  

TO-5

Vce Saturation (Max) @ Ib, Ic  

800mV @ 400mA, 2A

Voltage - Collector Emitter Breakdown (Max)  

200 V

Frequency - Transition  

-

Collector Current-Max (IC)  

2 A

DC Current Gain-Min (hFE)  

40

Continuous Collector Current  

2

Collector-Emitter Voltage-Max  

200 V

Product Category  

Bipolar Transistors - BJT

IP Rating  

IP65