Mounting Type  

Through Hole

Package / Case  

-

Surface Mount  

NO

Supplier Device Package  

TO-18

Number of Terminals  

3

Transistor Element Material  

SILICON

Package  

Bulk

Base Product Number  

2N4393

Mfr  

Microchip Technology

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

0.4 V

Pd - Power Dissipation  

1.8 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Drain-Source Current at Vgs=0  

30 mA

Mounting Styles  

Through Hole

Manufacturer  

Microchip

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

100 Ohms

Maximum Drain Gate Voltage  

40 V

RoHS  

N

Vgs - Gate-Source Breakdown Voltage  

40 V

Gate-Source Cutoff Voltage  

3 V

Id - Continuous Drain Current  

12 mA

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Operating Temperature-Min  

-65 °C

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

175 °C

Rohs Code  

No

Manufacturer Part Number  

2N4393

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Samacsys Description  

JFET 40V N-Ch JFET 40Vgs 50mA 1.8W TO-18

Ihs Manufacturer  

CENTRAL SEMICONDUCTOR CORP

Risk Rank  

1.04

Operating Temperature  

-55°C ~ 125°C (TJ)

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

Type  

JFET

Terminal Finish  

Tin/Lead (Sn/Pb)

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

Single

Operating Mode  

DEPLETION MODE

Power - Max  

1.8 W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds  

14pF @ 20V

Polarity/Channel Type  

N-CHANNEL

Product Type  

JFETs

JEDEC-95 Code  

TO-18

Drain-source On Resistance-Max  

100 Ω

FET Technology  

JUNCTION

Power Dissipation-Max (Abs)  

1.8 W

Feedback Cap-Max (Crss)  

3.5 pF

Current - Drain (Idss) @ Vds (Vgs=0)  

5 mA @ 20 V

Voltage - Cutoff (VGS off) @ Id  

500 mV @ 1 nA

Voltage - Breakdown (V(BR)GSS)  

40 V

Resistance - RDS(On)  

100 Ohms

Product Category  

JFET