Mounting Type  

Chassis Mount

Package / Case  

SP1

Surface Mount  

NO

Supplier Device Package  

SP1

Number of Terminals  

12

Transistor Element Material  

SILICON CARBIDE

Manufacturer Part Number  

U-37768

Manufacturer  

Turck

Continuous Drain Current Id  

100

Package  

Bulk

Base Product Number  

APTMC170

Current - Continuous Drain (Id) @ 25℃  

100A (Tc)

Mfr  

Microchip Technology

Product Status  

Active

Package Description  

FLANGE MOUNT, R-XUFM-X12

Package Style  

FLANGE MOUNT

Package Body Material  

UNSPECIFIED

Operating Temperature-Min  

-40 °C

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Package Shape  

RECTANGULAR

Number of Elements  

2

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.75

Drain Current-Max (ID)  

100 A

Operating Temperature  

-40°C ~ 150°C (TJ)

Series  

-

ECCN Code  

EAR99

Technology  

Silicon Carbide (SiC)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

JESD-30 Code  

R-XUFM-X12

Configuration  

2 N Channel (Phase Leg)

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

700

Case Connection  

ISOLATED

Power - Max  

700W

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

30mOhm @ 100A, 20V

Vgs(th) (Max) @ Id  

2.3V @ 5mA (Typ)

Input Capacitance (Ciss) (Max) @ Vds  

6160pF @ 1000V

Gate Charge (Qg) (Max) @ Vgs  

380nC @ 20V

Drain to Source Voltage (Vdss)  

1700V (1.7kV)

Polarity/Channel Type  

N-CHANNEL

Drain Current-Max (Abs) (ID)  

100 A

Drain-source On Resistance-Max  

0.035 Ω

Pulsed Drain Current-Max (IDM)  

200 A

DS Breakdown Voltage-Min  

1700 V

Channel Type  

Dual N

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

700 W

FET Feature  

-