Mounting Type  

Through Hole

Package / Case  

Axial

Supplier Device Package  

ISOTOP®

Dielectric Material  

Polypropylene (PP), Metallized

Lead Free Status / RoHS Status  

--

Voltage Rating DC  

2500V (2.5kV)

Voltage Rating AC  

700V

Continuous Drain Current Id  

25

Package  

Tube

Base Product Number  

APT10035

Current - Continuous Drain (Id) @ 25℃  

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

520W (Tc)

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

1 kV

Typical Turn-On Delay Time  

12 ns

Vgs th - Gate-Source Threshold Voltage  

3 V

Pd - Power Dissipation  

520 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

1.058219 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mounts

Manufacturer  

Microchip

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

350 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

36 ns

Id - Continuous Drain Current  

25 A

Operating Temperature  

-55°C ~ 85°C

Series  

PPA

Packaging  

Bulk

Size / Dimension  

0.709 Dia x 1.142 L (18.00mm x 29.00mm)

Tolerance  

±10%

Part Status  

Active

Moisture Sensitivity Level (MSL)  

--

Termination  

PC Pins

Type  

Power MOSFET

Applications  

DC Link, DC Filtering; High Frequency, Switching; Snubber

Capacitance  

0.03µF

Subcategory  

Discrete Semiconductor Modules

Technology  

MOSFET (Metal Oxide)

ESR (Equivalent Series Resistance)  

20 mOhms

Lead Spacing  

--

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

520

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

350mOhm @ 14A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

5185 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

186 nC @ 10 V

Rise Time  

10 ns

Drain to Source Voltage (Vdss)  

1000 V

Vgs (Max)  

±30V

Product Type  

Discrete Semiconductor Modules

Channel Type  

N

FET Feature  

-

Product  

Power MOSFET Modules

Features  

--

Product Category  

Discrete Semiconductor Modules

Height Seated (Max)  

--

Width  

25.2 mm

Height  

8.9 mm

Length  

38 mm

Ratings  

--