Mounting Type  

Through Hole

Package / Case  

Radial

Supplier Device Package  

SOT-227 (ISOTOP®)

Dielectric Material  

Polypropylene (PP), Metallized

Lead Free Status / RoHS Status  

--

Voltage Rating DC  

2000V (2kV)

Voltage Rating AC  

700V

Continuous Drain Current Id  

37

Package  

Tube

Base Product Number  

MSC080

Current - Continuous Drain (Id) @ 25℃  

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

-

Mfr  

Microchip Technology

Power Dissipation (Max)  

-

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

-

Vds - Drain-Source Breakdown Voltage  

1.2 kV

Pd - Power Dissipation  

200 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 10 V, + 25 V

Unit Weight  

1.664155 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mounts

Manufacturer  

Microchip

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

100 mOhms

RoHS  

Details

Id - Continuous Drain Current  

37 A

Operating Temperature  

-55°C ~ 105°C

Series  

PPB

Packaging  

Bulk

Size / Dimension  

1.260 L x 0.512 W (32.00mm x 13.00mm)

Tolerance  

±10%

Part Status  

Active

Moisture Sensitivity Level (MSL)  

--

Termination  

PC Pins

Type  

Power MOSFET

Applications  

Commutation; High Pulse, DV/DT; Snubber

Capacitance  

0.03µF

Subcategory  

Discrete Semiconductor Modules

Technology  

SiCFET (Silicon Carbide)

Lead Spacing  

1.083 (27.50mm)

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

200

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

-

Drain to Source Voltage (Vdss)  

1200 V

Vgs (Max)  

-

Product Type  

Discrete Semiconductor Modules

FET Feature  

-

Product  

IGBT Silicon Carbide Modules

Features  

--

Product Category  

Discrete Semiconductor Modules

Height Seated (Max)  

0.866 (22.00mm)

Ratings  

--