Mounting Type  

Through Hole

Package / Case  

3AB, 3AG, 1/4 x 1-1/4 (Axial)

Supplier Device Package  

D3PAK

Lead Free Status / RoHS Status  

--

Approvals  

CE, CSA, cULus

Voltage Rating AC  

250V

Continuous Drain Current Id  

9

Vds - Drain-Source Breakdown Voltage  

1 kV

Typical Turn-On Delay Time  

12 ns

Vgs th - Gate-Source Threshold Voltage  

5 V

Pd - Power Dissipation  

335 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

0.218699 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

SMD/SMT

Forward Transconductance - Min  

10 S

Channel Mode  

Enhancement

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

80 nC

Rds On - Drain-Source Resistance  

1.4 Ohms

RoHS  

Details

Typical Turn-Off Delay Time  

40 ns

Id - Continuous Drain Current  

9 A

Package  

Tube

Base Product Number  

APT9M100

Current - Continuous Drain (Id) @ 25℃  

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

335W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Operating Temperature  

-55°C ~ 125°C

Series  

3SBP

Packaging  

Bulk

Size / Dimension  

0.272 Dia x 1.280 L (6.90mm x 32.50mm)

Part Status  

Active

Color  

--

Subcategory  

MOSFETs

Technology  

Si

Current Rating  

63mA

Configuration  

Single

Number of Channels  

1 Channel

Response Time  

Slow

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

1.4Ohm @ 5A, 10V

Fuse Type  

Cartridge, Glass

Input Capacitance (Ciss) (Max) @ Vds  

2605 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

80 nC @ 10 V

Rise Time  

11 ns

Drain to Source Voltage (Vdss)  

1000 V

Vgs (Max)  

±30V

Breaking Capacity @ Rated Voltage  

200A

Product Type  

MOSFET

Transistor Type  

1 N-Channel

Channel Type  

N

FET Feature  

-

Product Category  

MOSFET